Materials interaction at the nanoscale in high-k metal gate stacks: The role of oxygen
- S. Guha
- E.J. Preisler
- et al.
- 2005
- ECS Meeting 2005
Publications
Date
Featured collections
Popular topics
8 results for E.J. Preisler
Crystallinity and wet etch behavior of HfO2 films grown by MOCVD
- Katherine L. Saenger
- Cyril Cabral Jr.
- et al.
- 2003
- MRS Proceedings 2003
Electrical characteristics of metal - (La0.27Y 0.73)2O3 - Silicon capacitors
- E.J. Preisler
- N.A. Bojarczuk
- et al.
- 2003
- MRS Proceedings 2003
Ultrathin epitaxial germanium on crystalline oxide metal-oxide- semiconductor-field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2005
- Applied Physics Letters
Characterization of epitaxial germanium grown on (La xY 1-x) 2O 3 Si(111) using different surfactants
- E.J. Preisler
- S. Guha
- 2005
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- James Jer-Hueih Chen
- Nestor A. Bojarczuk Jr.
- et al.
- 2004
- IEEE Transactions on Electron Devices
Epitaxial silicon and germanium on buried insulator heterostructures and devices
- N.A. Bojarczuk
- M. Copel
- et al.
- 2003
- Applied Physics Letters