A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
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10 results for K. Malone
Nanoporous materials integration into advanced microprocessors
- E. Todd Ryan
- Cathy Labelle
- et al.
- 2005
- MRS Spring Meeting 2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
Enhanced cracking resistance of plasma deposited low k SiCOH films with nano imbedded layers
- Son Nguyen
- Eric Liniger
- et al.
- 2007
- ECS Meeting 2007
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Lower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Porous ILD process development for sub 100nm integration
- K. Malone
- S.T. Chen
- et al.
- 2003
- ADMETA 2003
Opportunities and challenges in ultra low k dielectrics for interconnect applications
- S. Purushothaman
- S.V. Nitta
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting