Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
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50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers