Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
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22 results for Huajie Chen
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers