Sub-50 nm half-pitch imaging with a low activation energy chemically amplified photoresist
- G.M. Wallraff
- D. Medeiros
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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43 results for D. Medeiros
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
IBM-JSR 193nm negative tone resist: Polymer design, material properties, and lithographic performance
- Kaushal Patel
- Margaret Lawson
- et al.
- 2004
- Microlithography 2004
Liquid immersion lithography - Evaluation of resist issues
- William Hinsberg
- Gregory Wallraff
- et al.
- 2004
- Microlithography 2004
Current Developments of a High Performance CA Resist for Mask Making Application
- Wu-Song Huang
- Wei He
- et al.
- 2003
- Photomask and Next-Generation Lithography Mask Technology 2003
Highly etch selective spin-on bottom antireflective coating for use in 193 nm lithography and beyond
- Dirk Pfeiffer
- Arpan Mahorowala
- et al.
- 2003
- Microlithography 2003
Extendibility of chemically amplified amplified resists: Another brick wall?
- William Hinsberg
- Frances Houle
- et al.
- 2003
- Microlithography 2003
Hardmask technology for sub-100 nm lithographic imaging
- Katherina Babich
- Arpan P. Mahorowala
- et al.
- 2003
- Microlithography 2003
[(CH3)3NCH2CH2NH3] SNl4: A layered perovskite with quaternary/primary ammonium dications and short interlayer iodine-iodine contacts
- Zhengtao Xu
- David B. Mitzi
- et al.
- 2003
- Inorganic Chemistry
Hybrid field-effect transistor based on a low-temperature melt-processed channel layer
- D.B. Mitzi
- C. Dimitrakopoulos
- et al.
- 2002
- Advanced Materials