SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- Richard G. Southwick
- Miaomiao Wang
- et al.
- 2019
- VLSI Technology 2019
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14 results for Choonghyun Lee
Channel Strain Dependence of Tinv in Strained Si and Sil-xGexFETs: Internal Strain-induced Modification of Chemical Oxidation
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2019
- VLSI Technology 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- Ruqiang Bao
- Richard G. Southwick
- et al.
- 2018
- VLSI Technology 2018
Advanced replacement high-K/metal gate stack engineering for high-performance strained silicon-germanium FinFETs with high Ge content
- Pouya Hashemi
- Takashi Ando
- et al.
- 2018
- AiMES - ECS - SMEQ 2018
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- IEDM 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
Understanding the interfacial layer formation on strained Si1-xGex channels and their correlation to inversion layer hole mobility
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- VLSI Technology 2017
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- ASICON 2017