Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
- Takeshi Nogami
- H. Huang
- et al.
- 2019
- VLSI Technology 2019
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43 results for James Kelly
Annealing and impurity effects in co thin films for MOL Contact and BEOL metallization
- James Kelly
- Vimal Kamineni
- et al.
- 2018
- JES
Leakage aware Si/SiGe CMOS FinFET for low power applications
- G. Tsutsui
- C. Durfee
- et al.
- 2018
- VLSI Technology 2018
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
Experimental study of PVD Cu/CVD Co bilayer dissolution for BEOL Cu interconnect applications
- X. Sun
- B. Peethala
- et al.
- 2017
- ECS Meeting 2017
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
- Takeshi Nogami
- Raghuveer Patlolla
- et al.
- 2017
- IITC 2017
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016