Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration
- P. Bhosale
- J. Maniscalco
- et al.
- 2018
- IITC 2018
Publications
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23 results for Koichi Motoyama
Impact of Liner Metals on Copper Resistivity at beyond 7nm Dimensions
- H. Huang
- Nicholas A. Lanzillo
- et al.
- 2018
- IITC 2018
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
Experimental study of PVD Cu/CVD Co bilayer dissolution for BEOL Cu interconnect applications
- X. Sun
- B. Peethala
- et al.
- 2017
- ECS Meeting 2017
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
BEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
ALD and PVD tantalum nitride barrier resistivity and their significance in via resistance trends
- O. Van Der Straten
- X. Zhang
- et al.
- 2014
- ECSSMEQ 2014
Performance of ultrathin alternative diffusion barrier metals for next - Generation BEOL technologies, and their effects on reliability
- Takeshi Nogami
- M. Chae
- et al.
- 2014
- IITC/AMC 2014
Novel Cu reflow seed process for Cu/low-k 64nm pitch dual damascene interconnects and beyond
- K. Motoyama
- Oscar Van der Straten
- et al.
- 2012
- IITC 2012
Mn-dopant segregation as an indicator of barrier integrity in 32nm groundrule Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder H. Baumann
- et al.
- 2011
- ADMETA 2011