Impact of Liner Metals on Copper Resistivity at beyond 7nm Dimensions
- H. Huang
- Nicholas A. Lanzillo
- et al.
- 2018
- IITC 2018
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24 results for Koichi Motoyama
Impact of Line and Via Resistance on Device Performance at the 5nm Gate All Around Node and beyond
- Nicholas A. Lanzillo
- Koichi Motoyama
- et al.
- 2018
- IITC 2018
Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and beyond
- Koichi Motoyama
- O. Van Der Straten
- et al.
- 2018
- IITC 2018
Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration
- P. Bhosale
- J. Maniscalco
- et al.
- 2018
- IITC 2018
CMP development for Ru liner structures beyond 14nm
- Raghuveer Patlolla
- Koichi Motoyama
- et al.
- 2018
- ECS J. Solid State Sci. Technol.
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
Experimental study of PVD Cu/CVD Co bilayer dissolution for BEOL Cu interconnect applications
- X. Sun
- B. Peethala
- et al.
- 2017
- ECS Meeting 2017
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
BEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
ALD and PVD tantalum nitride barrier resistivity and their significance in via resistance trends
- O. Van Der Straten
- X. Zhang
- et al.
- 2014
- ECSSMEQ 2014