Evaluation of device damage from e-beam curing of ultra low-k BEOL dielectrics
- S. Mehta
- C. Dimitrakopoulos
- et al.
- 2005
- AMC 2005
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96 results for Barry P. Linder
High performance FDSOI CMOS technology with metal gate and high-k
- Bruce Doris
- Y.-H. Kim
- et al.
- 2005
- VLSI Technology 2005
Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2
- E. Cartier
- F.R. McFeely
- et al.
- 2005
- VLSI Technology 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
On the location and magnitude of trapped charge in poly- Si ALD-Al 2O3 capped Hf-silicate gate stacks
- Kingsuk Maitra
- Barry P. Linder
- et al.
- 2005
- PRiME/ECS Meeting 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
Ultra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack
- B. Doris
- B.P. Linder
- et al.
- 2005
- VLSI-TSA 2005
Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Breakdown transients in ultra-thin gate oxynitrides
- S. Lombarde
- F. Palumbo
- et al.
- 2004
- ICICDT 2004
Dual workfunction fully silicided metal gates
- C. Cabral Jr.
- J. Kedzierski
- et al.
- 2004
- VLSI Technology 2004