Growth of abrupt Ge layers in Si (100)
- Subramanian S. Iyer
- P.R. Pukite
- et al.
- 1989
- Journal of Crystal Growth
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124 results for Subramanian S. Iyer
Heterojunction Bipolar Transistors Using Si-Ge Alloys
- Subramanian S. Iyer
- Gary L. Patton
- et al.
- 1989
- IEEE T-ED
Demonstration of a p-Channel BICFET in the GexSi1-x/Si System
- R.C. Taft
- James D. Plummer
- et al.
- 1989
- IEEE Electron Device Letters
Raman Spectroscopy and the Characterization of Buried Semiconductor Layers
- James C. Tsang
- Subramanian S. Iyer
- 1989
- IEEE JQE
High conductivity polycrystalline silicon obtained by molecular beam deposition
- S.L. Delage
- S.-J. Jeng
- et al.
- 1988
- Applied Physics Letters
Technique for selective etching of Si with respect to Ge
- A.A. Bright
- Subramanian S. Iyer
- et al.
- 1988
- Applied Physics Letters
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy
- Subramanian S. Iyer
- S.L. Delage
- et al.
- 1988
- Applied Physics Letters
Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters
Kinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of silicon
- R. Ghez
- Subramanian S. Iyer
- 1988
- IBM J. Res. Dev