Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy
- J.C. Tsang
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters
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Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing
- H.B. Harrison
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters
100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon
- T.L. Lin
- S.C. Chen
- et al.
- 1986
- Applied Physics Letters
USE OF TiSi//2 FOR SELF ALIGNED SILICIDE (SALICIDE) TECHNOLOGY.
- C.-Y. Ting
- Subramanian S. Iyer
- 1984
- VMIC 1984
Grain growth study in aluminum films and electromigration implications
- Subramanian S. Iyer
- C.Y. Wong
- 1985
- Journal of Applied Physics
HIGH TEMPERATURE PROCESS LIMITATIONS ON TiSi//2.
- C.-Y. Ting
- F.M. d'Heurle
- et al.
- 1984
- ECS Meeting 1984
ON THE DETERMINATION OF SHARP DOPING PROFILES.
- Subramanian S. Iyer
- Frederick G. Allen
- 1984
- ECS Meeting 1984
DOPANT INCORPORATION PROCESSES IN SILICON GROWN BY MOLECULAR BEAM EPITAXY.
- Subramanian S. Iyer
- Robert A. Metzger
- et al.
- 1983
- ECS Meeting 1983
INTERACTION BETWEEN Ti AND SiO//2.
- C.-Y. Ting
- M. Wittmer
- et al.
- 1983
- ECS Meeting 1983
DOPANT INCORPORATION PROCESSES IN SILICON GROWN BY MOLECULAR BEAM EPITAXY.
- Subramanian S. Iyer
- Robert A. Metzger
- et al.
- 1983
- VLSI Science and Technology 1983