Effects of growth direction on sige/si heteroepitaxy
- T.S. Kuan
- Subramanian S. Iyer
- 1990
- SPIE Advances in Semiconductors and Superconductors 1990
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Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
USE OF TiSi//2 FOR SELF ALIGNED SILICIDE (SALICIDE) TECHNOLOGY.
- C.-Y. Ting
- Subramanian S. Iyer
- 1984
- VMIC 1984
HIGH TEMPERATURE PROCESS LIMITATIONS ON TiSi//2.
- C.-Y. Ting
- F.M. d'Heurle
- et al.
- 1984
- ECS Meeting 1984
ON THE DETERMINATION OF SHARP DOPING PROFILES.
- Subramanian S. Iyer
- Frederick G. Allen
- 1984
- ECS Meeting 1984
DOPANT INCORPORATION PROCESSES IN SILICON GROWN BY MOLECULAR BEAM EPITAXY.
- Subramanian S. Iyer
- Robert A. Metzger
- et al.
- 1983
- VLSI Science and Technology 1983
AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON.
- Subramanian S. Iyer
- C.-Y. Ting
- et al.
- 1983
- VLSI Science and Technology 1983
INTERACTION BETWEEN Ti AND SiO//2.
- C.-Y. Ting
- M. Wittmer
- et al.
- 1983
- ECS Meeting 1983
INTERACTION BETWEEN Ti AND SiO//2.
- C.-Y. Ting
- M. Wittmer
- et al.
- 1983
- VLSI Science and Technology 1983