Strain relaxation in GeSi layers with uniform and graded composition
- S.C. Jain
- P. Balk
- et al.
- 1991
- ESSDERC 1991
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124 results for Subramanian S. Iyer
Growth and applications of Si1-xGex alloys in a Si-based technology
- Subramanian S. Iyer
- 1991
- SSDM 1991
Temperature dependent transport measurements on strained Si/Si1-xGex resonant tunneling devices
- Ulf Gennser
- V.P. Kesan
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Photoluminescence from epitaxial Si/Si0.95Ge0.05 heterostructures as probed by optically active deep levels
- G. Northrop
- D.J. Wolford
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Control of misoriented grains and pinholes in CoSi2 grown on Si(001)
- L.J. Schowalter
- J.R. Jimenez
- et al.
- 1991
- Journal of Crystal Growth
Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE
- V.P. Kesan
- Subramanian S. Iyer
- et al.
- 1991
- Journal of Crystal Growth
Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics
- V.P. Kesan
- P.G. May
- et al.
- 1991
- Journal of Crystal Growth
Novel diffusion phenomenon of dopants in silicon at low temperatures
- M. Wittmer
- P. Fahey
- et al.
- 1991
- Physical Review Letters
Radiative recombination in MBE-prepared epitaxial Si and Si1-xGex layers
- G. Northrop
- D.J. Wolford
- et al.
- 1991
- Solid State Communications
Strain relaxation in GeSi layers with uniform and graded composition
- S.C. Jain
- P. Balk
- et al.
- 1991
- Microelectronic Engineering