Mechanisms of Electromigration Damage in Cu Interconnects
- C. K. Hu
- Lynne Gignac
- et al.
- 2018
- IEDM 2018
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30 results for P. S. McLaughlin
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
- Benjamin D. Briggs
- C.B. Pcethala
- et al.
- 2018
- IITC 2018
Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration
- P. Bhosale
- J. Maniscalco
- et al.
- 2018
- IITC 2018
Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and beyond
- Koichi Motoyama
- O. Van Der Straten
- et al.
- 2018
- IITC 2018
Electromigration characteristics of power grid like structures
- Baozhen Li
- Andrew Kim
- et al.
- 2018
- IRPS 2018
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
- Benjamin D. Briggs
- C.B. Peethala
- et al.
- 2017
- IEDM 2017
Experimental study of PVD Cu/CVD Co bilayer dissolution for BEOL Cu interconnect applications
- X. Sun
- B. Peethala
- et al.
- 2017
- ECS Meeting 2017
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
- Takeshi Nogami
- Raghuveer Patlolla
- et al.
- 2017
- IITC 2017
Microstructure modulation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2017
- IITC 2017