The effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper interconnects
- R. Filippi
- P.-C. Wang
- et al.
- 2009
- IRPS 2009
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30 results for P. S. McLaughlin
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Line edge roughness and spacing effect on low-k TDDB characteristics
- F. Chen
- J.R. Lloyd
- et al.
- 2008
- IRPS 2008
A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development
- F. Chen
- O. Bravo
- et al.
- 2006
- IRPS 2006
Electromigration in sub-micron Cu interconnects in low k dielectrics
- B.N. Agarwala
- D. Nguyen
- et al.
- 2005
- ECS Meeting 2005
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Integration of copper and fluorosilicate glass for 0.18 μm interconnections
- E. Barth
- T. Ivers
- et al.
- 2000
- IITC 2000
Copper dual damascene wiring for sub-0.25 μm CMOS technology
- J. Heidenreich
- D. Edelstein
- et al.
- 1998
- IITC 1998
Electromigration challenges for nanoscale Cu wiring
- C.-K. Hu
- L. Gignac
- et al.
- 2008
- International Workshop on Stress-Induced Phenomena in Metallization 2008