ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing
- Jianshi Tang
- Douglas M. Bishop
- et al.
- 2018
- IEDM 2018
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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18 results for Kevin Chan
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- IEDM 2014
Complementary thin-base symmetric lateral bipolar transistors on SOI
- Jin Cai
- Tak H. Ning
- et al.
- 2011
- IEDM 2011
First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions
- Pouya Hashemi
- Jeng-Bang Yau
- et al.
- 2017
- S3S 2017
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
Semiconductor-On-Insulator lateral bipolar transistors for high-speed low-power applications
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2017
- VLSI-TSA 2017
High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI-TSA 2017
Ge-on-insulator lateral bipolar transistors
- Jeng-Bang Yau
- Joonah Yoon
- et al.
- 2016
- BCTM 2016
Prospects of high-Ge-content strained SiGe for advanced FinFET generations
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2016
- PRiME/ECS Meeting 2016