High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
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21 results for M. Lofaro
Integrated nanoscale deterministic lateral displacement arrays for separation of extracellular vesicles from clinically-relevant volumes of biological samples
- Joshua T. Smith
- Benjamin Wunsch
- et al.
- 2018
- Lab on a Chip
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2
- Adam Pyzyna
- Hsinyu Tsai
- et al.
- 2017
- IITC 2017
Wafer-scale integration of sacrificial nanofluidic chips for detecting and manipulating single DNA molecules
- Chao Wang
- Sung Wook Nam
- et al.
- 2017
- Nature Communications
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
Critical BEOL aspects of the fabrication of a thermally-assisted MRAM device
- E.J. O'sullivan
- Daniel C. Edelstein
- et al.
- 2015
- ECS Meeting 2015 Phoenix
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015
Resistivity of copper interconnects beyond the 7 nm node
- Adam Pyzyna
- Robert L. Bruce
- et al.
- 2015
- VLSI Technology 2015