Characterization of spin-orbit fields in InGaAs quantum wells
- T. Henn
- Lukas Czornomaz
- et al.
- 2016
- Applied Physics Letters
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106 results for Lukas Czornomaz
Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated with Silicon Active Substrate (III-V-OIAS)
- Jianqiang Lin
- Lukas Czornomaz
- et al.
- 2016
- IEEE T-ED
Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
- George Zerveas
- E. Caruso
- et al.
- 2016
- Solid-State Electronics
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
- Kristy J. Kormondy
- Stefan Abel
- et al.
- 2015
- Microelectronic Engineering
Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
Electrical characterisation of InGaAs on insulator structures
- K. Cherkaoui
- Y.Y. Gomeniuk
- et al.
- 2015
- Microelectronic Engineering
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
- Christophe Rossel
- P. Weigele
- et al.
- 2014
- Solid-State Electronics
Nanoscale physics and defect state chemistry at amorphous-Si/In 0.53Ga0.47As interfaces
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- Journal of Physics D: Applied Physics