Nanoscale physics and defect state chemistry at amorphous-Si/In 0.53Ga0.47As interfaces
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- Journal of Physics D: Applied Physics
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106 results for Lukas Czornomaz
Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- IEDM 2013
Thermal stability of ultra-thin InGaAs-on-insulator substrates
- N. Daix
- Lukas Czornomaz
- et al.
- 2013
- S3S 2013
Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- ESSDERC 2013
III-V heterostructure-on-insulator for strain studies in n-InGaAs channels
- P. Weigele
- Lukas Czornomaz
- et al.
- 2013
- ULIS 2013
Electro-optical active barium titanate thin films in silicon photonics devices
- Stefan Abel
- Thilo Stöferle
- et al.
- 2013
- IPRSN 2013
Confinement and integration of magnetic impurities in silicon
- Frank J. Rueß
- Mario El Kazzi
- et al.
- 2013
- Applied Physics Letters
Physical and electrical properties of scaled gate stacks on Si/passivated In0.53Ga0.47As
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- ECS Transactions
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012
Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2012
- DRC 2012