80 nm InGaAs MOSFET W-band low noise amplifier
Arnulf Leuther, Matthias Ohlrogge, et al.
IMS 2017
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths. © The Electrochemical Society.
Arnulf Leuther, Matthias Ohlrogge, et al.
IMS 2017
Veeresh Deshpande, Herwig Hahn, et al.
VLSI Technology 2017
Felix Eltes, Christian Mai, et al.
Journal of Lightwave Technology
Felix Eltes, Daniele Caimi, et al.
IPC 2018