Mario El Kazzi, Lukas Czornomaz, et al.
Applied Physics Letters
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths. © The Electrochemical Society.
Mario El Kazzi, Lukas Czornomaz, et al.
Applied Physics Letters
Marc Seifried, Gustavo Villares, et al.
IEEE JSTQE
F.M. Bufler, M. Frey, et al.
DRC 2016
Lukas Czornomaz, Nicolas Daix, et al.
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