Kristy J. Kormondy, Alexander A. Demkov, et al.
ICICDT 2017
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths. © The Electrochemical Society.
Kristy J. Kormondy, Alexander A. Demkov, et al.
ICICDT 2017
J. Elliott Ortmann, Felix Eltes, et al.
ACS Photonics
Arnulf Leuther, Matthias Ohlrogge, et al.
IMS 2017
Lukas Czornomaz, V. Djara, et al.
VLSI Technology 2016