Replacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- EUROSOI-ULIS 2019
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106 results for Lukas Czornomaz
Novel CMOS-Compatible Ultralow Capacitance Hybrid IlI-V/Si Photodetectors Tested up to 32 Gbps NRZ
- Yannick Baumgartner
- Marc Seifried
- et al.
- 2019
- OFC 2019
A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
- Felix Eltes
- Christian Mai
- et al.
- 2019
- Journal of Lightwave Technology
High Performance Quantum Well InGaAs-On-Si MOSFETs with sub-20 nm Gate Length for RF Applications
- C. B. Zota
- Clarissa Convertino
- et al.
- 2018
- IEDM 2018
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- IEDM 2018
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS with Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- IEEE J-EDS
InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Materials
Scaling without scaling: A paradigm shift in the semiconductor industry
- C. B. Zota
- Lukas Czornomaz
- et al.
- 2018
- Europhysics News
CMOS-Compatible Hybrid III-V/Si Photodiodes Using a Lateral Current Collection Scheme
- Yannick Baumgartner
- C. Caer
- et al.
- 2018
- ECOC 2018