Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
- George Zerveas
- E. Caruso
- et al.
- 2016
- Solid-State Electronics
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106 results for Lukas Czornomaz
Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- SNW 2014
Barium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance
- Stefan Abel
- Thilo Stöferle
- et al.
- 2015
- ECOC 2015
A mode-engineered hybrid III-V-on-silicon photodetector
- Jens Hofrichter
- Lukas Czornomaz
- et al.
- 2015
- ECOC 2015
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
- Kristy J. Kormondy
- Stefan Abel
- et al.
- 2015
- Microelectronic Engineering
Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
Electrical characterisation of InGaAs on insulator structures
- K. Cherkaoui
- Y.Y. Gomeniuk
- et al.
- 2015
- Microelectronic Engineering
Material and device integration for hybrid III-V/SiGe CMOS technology
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- ECS Meeting 2015 Phoenix
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015