InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Materials
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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106 results for Lukas Czornomaz
Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In0.53Ga0.47As Ultrathin-Body MOSFETs and Mitigation Measures
- Saurabh Sant
- Paulina Aguirre
- et al.
- 2018
- IEEE T-ED
Highly selective dry etching of GaP in the presence of AlxGa1-xP with a SiCl4/SF6 plasma
- Simon Hönl
- Herwig Hahn
- et al.
- 2018
- Journal of Physics D: Applied Physics
Electrochemical Performance of All-Solid-State Li-Ion Batteries Based on Garnet Electrolyte Using Silicon as a Model Electrode
- Giulio Ferraresi
- Mario El Kazzi
- et al.
- 2018
- ACS Energy Letters
Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS with Interlayer Contacts
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- IEEE T-ED
Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP
- Herwig Hahn
- Marilyne Sousa
- et al.
- 2017
- Journal of Physics D: Applied Physics
Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond
- Veeresh Deshpande
- Vladimir Djara
- et al.
- 2017
- Japanese Journal of Applied Physics
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2017
- Solid-State Electronics
Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms
- H.J. Park
- L. Pirro
- et al.
- 2017
- Solid-State Electronics
Elucidating the Surface Reactions of an Amorphous Si Thin Film as a Model Electrode for Li-Ion Batteries
- Giulio Ferraresi
- Lukas Czornomaz
- et al.
- 2016
- ACS AMI