J.C. Marinace
JES
We have investigated the strain effects on the effective channel mobility of InGaAs pseudo (Ψ) n-MOSFETs by means of mechanical beam bending technique. For this goal, III-V heterostructures were grown on InP and transferred onto Si by direct wafer bonding. We show that an increase in electron mobility of up to 70% can be achieved under tensile strain. Simulations of InGaAs band-structure parameters under strain suggest that in the present case mobility enhancement is due to an increase of the sheet carrier density rather than to a decrease of the effective mass. © 2014 Elsevier Ltd. All rights reserved.
J.C. Marinace
JES
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
P. Alnot, D.J. Auerbach, et al.
Surface Science
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993