Germanium-on-Si MOSFETS with HFO 2 gate dielectric
- J.P. Donnelly
- J. Chen
- et al.
- 2005
- ECS Meeting 2005
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3 results for S. Dey
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs
- D.Q. Kelly
- S. Dey
- et al.
- 2005
- Microelectronics Reliability
Improved hot-electron reliability in strained-Si nMOS
- David Onsongo
- David Q. Kelly
- et al.
- 2004
- IEEE Transactions on Electron Devices