Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study
- S. Sayan
- R.A. Bartynski
- et al.
- 2004
- physica status solidi (b)
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7 results for Eric Garfunkel
Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects
- Martin M. Frank
- Safak Sayan
- et al.
- 2004
- Materials Science and Engineering: B
Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition
- Martin M. Frank
- Glen D. Wilk
- et al.
- 2005
- Applied Physics Letters
Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon
- S. Sayan
- N.V. Nguyen
- et al.
- 2005
- Applied Physics Letters
Metallic contact formation for molecular electronics: Interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols
- Bert De Boer
- Martin M. Frank
- et al.
- 2004
- Langmuir
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
- M.L. Green
- E. Gusev
- et al.
- 2001
- Journal of Applied Physics
Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
- H.C. Lu
- E. Gusev
- et al.
- 2000
- Journal of Applied Physics