Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Peter J. Price
Surface Science