1.5-V single work-function W/WN/n+-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM
- Rajesh Rengarajan
- Boyong He
- et al.
- 2002
- IEEE Electron Device Letters
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4 results for Kilho Lee
Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN)
- Kilho Lee
- Cheruvu Murthy
- et al.
- 2002
- IEEE Electron Device Letters
Plasma immersion ion implantation as an alternative doping technology for ULSI
- Kilho Lee
- 2001
- IWJT 2001
Nitrogen-induced transient enhanced diffusion of dopants
- Cheruvu Murthy
- Kilho Lee
- et al.
- 2002
- Applied Physics Letters