Publications

9 results for C. Webster

SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f_max
- - S.J. Koester
  - R. Hammond
  - et al.
- 2001
- IEEE Electron Device Letters
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- - D.R. Greenberg
  - D. Ahlgren
  - et al.
- 1999
- IMS 1999
Low-noise SiGe pMODFETs on sapphire with 116 GHz f_max
- - S.J. Koester
  - R. Hammond
  - et al.
- 2000
- DRC 2000
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- - D.R. Greenberg
  - D. Ahlgren
  - et al.
- 2000
- RFIC 2000
High-frequency noise performance of SiGe p-channel MODFETs
- - S.J. Koester
  - J.O. Chu
  - et al.
- 2000
- Electronics Letters
RF potential of a 0.18-μm CMOS logic device technology
- - Joachim N. Burghartz
  - Michael Hargrove
  - et al.
- 2000
- IEEE Transactions on Electron Devices
A 5.5-GHz low noise amplifier in SiGe BiCMOS
- - Herschel A. Ainspan
  - Charles S. Webster
  - et al.
- 1998
- ESSCIRC 1998
Measured results on bandgap reference in SiGe BiCMOS
- - H. Ainspan
  - C. Webster
- 1998
- Electronics Letters
SiGe power HBT's for low-voltage, high-performance RF applications
- - Joachim N. Burghartz
  - Jean-Olivier Plouchart
  - et al.
- 1998
- IEEE Electron Device Letters