SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
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4 results for P.R. De La Houssaye
Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2000
- DRC 2000
Silicon-on-sapphire for RF Si systems 2000
- I. Lagnado
- P.R. De La Houssaye
- et al.
- 2000
- SiRF 2000
A 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider
- Matt Wetzel
- Leathen Shi
- et al.
- 2000
- IEEE Microwave and Guided Wave Letters