Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
- Carlos Navarro
- Siegfried Karg
- et al.
- 2019
- Nature Electronics
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3 results for Carlos Marquez
Towards InGaAs MSDRAM capacitor-less cells
- Carlos Navarro
- Santiago Navarro
- et al.
- 2018
- ECS Meeting 2018
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
- Carlos Navarro
- Santiago Navarro
- et al.
- 2018
- IEEE J-EDS