Towards InGaAs MSDRAM capacitor-less cells
Carlos Navarro, Santiago Navarro, et al.
ECS Meeting 2018
2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell performance dependence on several parameters (such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps) and simulation models (like ballisticity or spatial quantum confinement) is analyzed and commented. Functional cells are presented and compared with analogous silicon 1T-DRAM memories to highlight the advantages and drawbacks.
Carlos Navarro, Santiago Navarro, et al.
ECS Meeting 2018
Carlos Navarro, Siegfried Karg, et al.
Nature Electronics
Carlos Navarro, Meng Duan, et al.
IEEE T-ED
Carlos Marquez, Carlos Navarro, et al.
Journal of Applied Physics