Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
- Carlos Navarro
- Siegfried Karg
- et al.
- 2019
- Nature Electronics
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9 results for Francisco Gamiz
Towards InGaAs MSDRAM capacitor-less cells
- Carlos Navarro
- Santiago Navarro
- et al.
- 2018
- ECS Meeting 2018
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
- Carlos Navarro
- Santiago Navarro
- et al.
- 2018
- IEEE J-EDS
Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration
- Carlos Navarro
- Meng Duan
- et al.
- 2017
- IEEE T-ED
Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM
- Carlos Navarro
- Joris Lacord
- et al.
- 2017
- IEEE T-ED
Analytic drain current model for III-V cylindrical nanowire transistors
- E.G. Marin
- F.G. Ruiz
- et al.
- 2015
- Journal of Applied Physics
Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate
- F. Gámiz
- M.V. Fischetti
- 2003
- Applied Physics Letters
On the enhanced electron mobility in strained-silicon inversion layers
- M.V. Fischetti
- F. Gámiz
- et al.
- 2002
- Journal of Applied Physics
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
- F. Gamiz
- M.V. Fischetti
- 2001
- Journal of Applied Physics