Publications

10 results for Francisco Gamiz

Low-Frequency Noise in InGaAs-OI Transistors
- - Carlos Marquez
  - Carlos Navarro
  - et al.
- 2024
- Journal of Applied Physics
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
- - Carlos Navarro
  - Siegfried Karg
  - et al.
- 2019
- Nature Electronics
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
- - Carlos Navarro
  - Santiago Navarro
  - et al.
- 2018
- IEEE J-EDS
Towards InGaAs MSDRAM capacitor-less cells
- - Carlos Navarro
  - Santiago Navarro
  - et al.
- 2018
- ECS Meeting 2018
Z²-FET as Capacitor-Less eDRAM Cell for High-Density Integration
- - Carlos Navarro
  - Meng Duan
  - et al.
- 2017
- IEEE T-ED
Extended Analysis of the Z²-FET: Operation as Capacitorless eDRAM
- - Carlos Navarro
  - Joris Lacord
  - et al.
- 2017
- IEEE T-ED
Analytic drain current model for III-V cylindrical nanowire transistors
- - E.G. Marin
  - F.G. Ruiz
  - et al.
- 2015
- Journal of Applied Physics
Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate
- - F. Gámiz
  - M.V. Fischetti
- 2003
- Applied Physics Letters
On the enhanced electron mobility in strained-silicon inversion layers
- - M.V. Fischetti
  - F. Gámiz
  - et al.
- 2002
- Journal of Applied Physics
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
- - F. Gamiz
  - M.V. Fischetti
- 2001
- Journal of Applied Physics