Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
- Benjamin D. Briggs
- C.B. Peethala
- et al.
- 2017
- IEDM 2017
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11 results for T. Haigh
Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2021
- IITC 2021
Novel low k Dielectric materials for nano device interconnect technology
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2020
- VLSI-TSA 2020
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
- Benjamin D. Briggs
- C.B. Pcethala
- et al.
- 2018
- IITC 2018
Method of problem solving to diagnose high particle failures due to unique rotation stopping position: CFM: Contamination free manufacturing
- Jessica Gruss-Gifford
- T. Haigh
- et al.
- 2018
- ASMC 2018
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS Meeting 2017 - New Orleans
BEOL dielectric processing for Cu-Low k nano interconnect-impact of plasma CVD initial transient phenomena (ITP)
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2016
- PRiME/ECS Meeting 2016
Ultrathin (8-14 nm) conformal SiN for sub-20 nm Copper/Low-k Interconnects
- Son Van Nguyen
- Deepika Priyadarshini
- et al.
- 2014
- ECS Meeting 2014
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010