Novel low k Dielectric materials for nano device interconnect technology
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2020
- VLSI-TSA 2020
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129 results for Eric G. Liniger
Extreme-low k porous pSiCOH dielectrics prepared by PECVD
- H. You
- Petra Mennell
- et al.
- 2018
- JVSTB
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- C. J. Penny
- S. Gates
- et al.
- 2017
- IITC 2017
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS Meeting 2017 - New Orleans
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS J. Solid State Sci. Technol.
Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnects
- Deepika Priyadarshini
- Son Van Nguyen
- et al.
- 2017
- JVSTB
Towards an appropriate acceleration model for beol tddb
- Ramachandran Muralidhar
- Eric G. Liniger
- et al.
- 2016
- IRPS 2016
Effect of H2O on TDDB for a range of ULK ILD materials with varying damage resistance for robust and weak liners
- Eric G. Liniger
- Robert B. Laibowitz
- et al.
- 2016
- IRPS 2016
Ruthenium interconnect resistivity and reliability at 48 nm pitch
- Xunyuan Zhang
- Huai Huang
- et al.
- 2016
- IITC/AMC 2016
Post porosity plasma protection integration at 48 nm pitch
- H. Huang
- Krystelle Lionti
- et al.
- 2016
- IITC/AMC 2016