Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES
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129 results for Eric G. Liniger
Designing porous ultra low-κ dielectrics to meet scaling challenges
- E. Todd Ryan
- Steve Gates
- et al.
- 2011
- ADMETA 2011
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Extending photo-patternable low-κ concept to 193 nm lithography and e-beam lithography
- Qinghuang Lin
- Alshakim Nelson
- et al.
- 2011
- SPIE Advanced Lithography 2011
Processing and moisture effects on TDDB for Cu/ULK BEOL structures
- Eric G. Liniger
- T.M. Shaw
- et al.
- 2010
- ADMETA 2010
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Patternable low-κ material for "greener" semiconductor manufacturing
- Qinghuang Lin
- Shyng-Tsong Chen
- et al.
- 2010
- ICSICT 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
Multi-level integration of patternable low-κ material into advanced Cu BEOL
- Qinghuang Lin
- Shyng-Tsong Chen
- et al.
- 2010
- Proceedings of SPIE - The International Society for Optical Engineering 2010