Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
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119 results for Stephan A. Cohen
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Multi-level integration of patternable low-κ material into advanced Cu BEOL
- Qinghuang Lin
- Shyng-Tsong Chen
- et al.
- 2010
- Proceedings of SPIE - The International Society for Optical Engineering 2010
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Integration compatible porous SiCOH dielectrics from 45 to 22 nm
- S. Gates
- A. Grill
- et al.
- 2008
- ADMETA 2008
Advanced bilayer low-k dielectric cap for reliable high performance Cu-low k interconnects
- Griselda Bonilla
- Lawrence A. Clevenger
- et al.
- 2008
- ADMETA 2008
Integration and reliability of CVD Ru Cap for Cu/Low-k development
- C.-C. Yang
- D. Edelstein
- et al.
- 2009
- IITC 2009
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
Development and optimization of porous pSiCOH interconnect dielectrics for 45 nm and beyond
- A. Grill
- S. Gates
- et al.
- 2008
- IITC 2008