Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures
- K. Ismail
- J.O. Chu
- et al.
- 1997
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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10 results for M. Arafa
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- M. Arafa
- K. Ismail
- et al.
- 1996
- IEEE Electron Device Letters
DC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
High speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
- K. Ismail
- F. Legoues
- et al.
- 1994
- Physical Review Letters
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
- Patrick Fay
- Mohamed Arafa
- et al.
- 1997
- Journal of Lightwave Technology
Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- I. Adesida
- M. Arafa
- et al.
- 1997
- Microelectronic Engineering
High-transconductance p-type SiGe modulation-doped field-effect transistor
- M. Arafa
- P. Fay
- et al.
- 1995
- Electronics Letters
Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
Extremely high electron mobility in Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters