A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- Q. Liu
- Jim Adkisson
- et al.
- 2012
- ECS Meeting 2012
Publications
Date
Featured collections
Popular topics
69 results for Marwan Khater
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
FDSOI CMOS with dielectrically-isolated back gates and 30nm LG high-κ/metal gate
- Marwan Khater
- J. Cai
- et al.
- 2010
- VLSI Technology 2010
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
- H. Kawasaki
- V.S. Basker
- et al.
- 2009
- IEDM 2009
FinFET resistance mitigation through design and process optimization
- Cindy Wang
- Josephine Chang
- et al.
- 2009
- VLSI-TSA 2009
On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
On the frequency limits of SiGe HBTs for TeraHertz applications
- Yuan Jiahui
- Ram Krithivasan
- et al.
- 2007
- BCTM 2007