Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
- Benjamin D. Briggs
- C.B. Peethala
- et al.
- 2017
- IEDM 2017
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34 results for E. T. Ryan
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Nanoporous materials integration into advanced microprocessors
- E. Todd Ryan
- Cathy Labelle
- et al.
- 2005
- MRS Spring Meeting 2005
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
- Benjamin D. Briggs
- C.B. Pcethala
- et al.
- 2018
- IITC 2018
Patterning method impact on sub-36nm pitch interconnect variability
- N.V. Licausi
- James C.-H. Chen
- et al.
- 2018
- SPIE Advanced Lithography 2018
Planarity considerations in SADP for advanced BEOL patterning
- James H.-C. Chen
- Terry A. Spooner
- et al.
- 2017
- IITC 2017
Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
- Xunyuan Zhang
- Huai Huang
- et al.
- 2017
- IITC 2017
Interconnect performance and scaling strategy at the 5 nm Node
- James H.-C. Chen
- N.V. Licausi
- et al.
- 2016
- IITC/AMC 2016
Ruthenium interconnect resistivity and reliability at 48 nm pitch
- Xunyuan Zhang
- Huai Huang
- et al.
- 2016
- IITC/AMC 2016
Optimizing ULK film properties to enable BEOL integration with TDDB reliability
- E. T. Ryan
- Deepika Priyadarshini
- et al.
- 2015
- IITC/MAM 2015