Compact Model of Conductive-Metal-Oxide/HfOxAnalog Filamentary ReRAM Devices
- Matteo Galetta
- Donato Francesco Falcone
- et al.
- 2024
- ESSERC 2024
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31 results for Antonio La Porta
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOxReRAM Devices
- Davide G. F. Lombardo
- Mamidala Saketh Ram
- et al.
- 2024
- DRC 2024
Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfOx ReRAM devices
- Donato Francesco Falcone
- Stephan Menzel
- et al.
- 2024
- Nanoscale Horizons
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2ReRAM
- Donato Francesco Falcone
- Stephan Menzel
- et al.
- 2023
- IMW 2023
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOxReRAM
- T. Stecconi
- Y. Popoff
- et al.
- 2022
- ESSDERC 2022
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In-Memory Computing
- Tommaso Stecconi
- Roberto Guido
- et al.
- 2022
- Advanced Electronic Materials
Equivalent electrical circuit modelling of a TaOx/HfOxbased RRAM with optimized resistance window and multilevel states
- T. Stecconi
- Y. Popoff
- et al.
- 2022
- DRC 2022
A back-end-of-line compatible, ferroelectric analog non-volatile memory
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- IMW 2021
A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- EDTM 2021
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- IEEE J-EDS