Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
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62 results for Andrew Simon
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Extendibility study of a PVD Cu seed process with Ar+ Rf-Plasma enhanced coverage for 45nm interconnects
- Andrew H. Simon
- Tibor Bolom
- et al.
- 2008
- MRS Spring Meeting 2008
Comparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- JES
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Lower resistance scaled metal contacts to silicide for advanced CMOS
- A. Topol
- C. Sheraw
- et al.
- 2006
- VLSI Technology 2006
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Physical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
Comparison of electromigration in Cu interconnects with ALD or PVD TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2006
- ECS Meeting 2006
Electromigration Cu mass flow in Cu interconnections
- C.-K. Hu
- D. Canaperi
- et al.
- 2006
- Thin Solid Films