New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Publications
Date
Featured collections
Popular topics
11 results for I. Kuo
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- W. Chien
- Lynne Gignac
- et al.
- 2022
- IRPS 2022
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
- W. Chien
- Lynne Gignac
- et al.
- 2022
- EDTM 2022
A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM
- Nanbo Gong
- W. Chien
- et al.
- 2020
- VLSI Technology 2020
Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- Huai-Yu Cheng
- I. Kuo
- et al.
- 2020
- VLSI Technology 2020
Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications
- W. Chien
- H. Ho
- et al.
- 2019
- VLSI Technology 2019
Solution for PCM and OTS intermixing on cross-point phase change memory
- W. Chien
- Lynne Gignac
- et al.
- 2019
- IMW 2019
Superb endurance and appropriate Vth of PCM pillar cell using buffer layer for 3D cross-point memory
- N. Gang
- W. Chien
- et al.
- 2019
- IMW 2019
High endurance self-heating OTS-PCM pillar cell for 3D stackable memory
- C. Yeh
- W. Chien
- et al.
- 2018
- VLSI Technology 2018