An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
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16 results for M. H. Lee
A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- ISSCC 2016
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Analytical model for RESET operation of phase change memory
- B. Rajendran
- J. Karidis
- et al.
- 2008
- IEDM 2008
A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2017
- IEEE JSSC
A Retention-Aware multilevel cell phase change memory program evaluation metric
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- IEEE Electron Device Letters
Dynamic resistance - A metric for variability characterization of phase-change memory
- Bipin Rajendran
- Matt Breitwisch
- et al.
- 2009
- IEEE Electron Device Letters
Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- Huai-Yu Cheng
- I. Kuo
- et al.
- 2020
- VLSI Technology 2020
Greater than 2-bits/cell MLC storage for ultra high density phase change memory using a novel sensing scheme
- Jau-Yi Wu
- Win-San Khwa
- et al.
- 2015
- VLSI Technology 2015