Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around DevicesShogo MochizukiB. Colombeauet al.2020VLSI Technology 2020
Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET DevicesShogo MochizukiB. Colombeauet al.2018IEDM 2018