Leakage aware Si/SiGe CMOS FinFET for low power applications
G. Tsutsui, C. Durfee, et al.
VLSI Technology 2018
In this paper, horizontal gate-all-around (hGAA) devices with a SiGe cladded nanosheet (NS) channel have been explored for their potential benefits of Vt modulation and improved NBTI. The SiGe cladded NS channel was formed through trimming of the Si NS channel followed by selective SiGe epitaxial growth. Selective Si NS channel trimming of 1 - 2 nm per side with low roughness and conformal SiGe cladding epitaxial growth of 2 - 3 nm with good crystallinity were demonstrated. It is shown that a SiGe cladding NS channel provides a reduction of threshold voltage (Vt) and improved reliability. It is also shown that a conformal Si cap grown on the SiGe cladded NS channel suppresses the interface trap density (Dit).
G. Tsutsui, C. Durfee, et al.
VLSI Technology 2018
Hazar Yueksel, Ramon Bertran, et al.
MLSys 2020
Lin Dong, Steven Hung, et al.
VLSI Technology 2021
Laura Bégon-Lours, Mattia Halter, et al.
MRS Spring Meeting 2023