A Submicrometer High-Performance Bipolar TechnologyTze-Chiang ChenKai-Yap Tohet al.1989IEEE Electron Device Letters
A Reduced-Field Design Concept for High-Performance Bipolar TransistorsDenny D. TangPong-Fei Lu1989IEEE Electron Device Letters
Collector-Base Junction Avalanche Effects in Advanced Double-Poly Self-Aligned Bipolar TransistorsPong-Fei LuTze-Chiang Chen1989IEEE T-ED
Lateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar TransistorsPong-Fei LuG.P. Liet al.1987IEEE Electron Device Letters