SiGe Gate-All-around Nanosheet Reliability
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2022
- IRPS 2022
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57 results for Miaomiao Wang
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Subhadeep Kal
- et al.
- 2021
- ECS Meeting 2021
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs
- Nilotpal Choudhury
- Tarun Samadder
- et al.
- 2021
- IRPS 2021
TDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- Ruqiang Bao
- K. Watanabe
- et al.
- 2020
- VLSI Technology 2020
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2020
- IRPS 2020
A new technique for evaluating stacked nanosheet inner spacer TDDB reliability
- Tian Shen
- K. Watanabe
- et al.
- 2020
- IRPS 2020
Analysis of BTI, SHE Induced BTI and HCD under Full VG/VD Space in GAA Nano-Sheet N and P FETs
- Nilotpal Choudhury
- Uma Sharma
- et al.
- 2020
- IRPS 2020
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- Richard G. Southwick
- Miaomiao Wang
- et al.
- 2019
- VLSI Technology 2019