First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- Matthias Gottwald
- Guohan Hu
- et al.
- 2024
- VLSI Technology and Circuits 2024
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7 results for Jonathan Sun
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
- Guohan Hu
- Jonathan Sun
- et al.
- 2021
- IEDM 2021
Modeling a Toffoli Gate Constructed Using Perpendicular Magnetic Tunnel Junctions
- Dairong Chen
- Augustin Couton Wyporek
- et al.
- 2024
- APS March Meeting 2024
An easy-plane anisotropy dominant stochastic magnetic tunnel junction as a circuit entropy source
- Jonathan Sun
- 2024
- INTERMAG 2024
Spin transmission through NiO in Pt/NiO/NM/Py heterostructure
- Biswajit Sahoo
- Christopher Safranski
- et al.
- 2024
- MMM 2024
Easy plane magnetic tunnel junction as an entropy source for computing
- Jonathan Sun
- Christopher Safranski
- et al.
- 2023
- MMM 2023
Memory-compatible perpendicular magnetic tunnel junctions under bi-directional strobe write pulses: A method for generating true random number bits at high speed
- Jonathan Sun
- 2024
- Journal of Applied Physics