Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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51 results for Pouya Hashemi

First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- - Veeresh Deshpande
  - V. Djara
  - et al.
- 2015
- IEDM 2015
High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- - Winston Chern
  - Pouya Hashemi
  - et al.
- 2012
- IEDM 2012
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- - K. Cheng
  - A. Khakifirooz
  - et al.
- 2012
- IEDM 2012
High Mobility High-Ge-Content SiGe PMOSFETs Using Al₂O₃/HfO₂ Stacks with In-Situ O₃ Treatment
- - Takashi Ando
  - Pouya Hashemi
  - et al.
- 2017
- IEEE Electron Device Letters
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
- - Winston Chern
  - Pouya Hashemi
  - et al.
- 2014
- IEEE Electron Device Letters
Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- - Pouya Hashemi
  - Winston Chern
  - et al.
- 2012
- IEEE Electron Device Letters
High hole-mobility strained-Ge/Si _0.6Ge _0.4 P-MOSFETs with high-κ/metal gate: Role of strained-Si cap thickness
- - Pouya Hashemi
  - Judy L. Hoyt
- 2012
- IEEE Electron Device Letters
STT-MRAM - Status and Outlook
- - Daniel C. Worledge
  - C. Safranski
  - et al.
- 2022
- TMRC 2022
Advanced replacement high-K/metal gate stack engineering for high-performance strained silicon-germanium FinFETs with high Ge content
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2018
- AiMES - ECS - SMEQ 2018