Characterization of "ultrathin-Cu"/Ru(Ta)/TaN liner stack for copper interconnects
- C.-C. Yang
- S. Cohen
- et al.
- 2010
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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142 results for Daniel Edelstein
Characterization of selectively deposited cobalt capping layers: Selectivity and electromigration resistance
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- IEEE Electron Device Letters
Enhanced via integration process for copper/ultralow-κ interconnects
- C.-C. Yang
- F. Chen
- et al.
- 2010
- IEEE Electron Device Letters
Critical BEOL aspects of the fabrication of a thermally-assisted MRAM device
- E.J. O'sullivan
- Daniel C. Edelstein
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Metal-induced line width variability challenge and mitigation strategy in advanced post-Cu interconnects
- Koichi Motoyama
- Nicholas A. Lanzillo
- et al.
- 2022
- IITC 2022
Scatterometry based methodologies for characterization of MRAM technology
- Manasa Medikonda
- Daniel Schmidt
- et al.
- 2022
- SPIE Advanced Lithography 2022
Dual Damascene BEOL Extendibility With Cu Reflow / Selective TaN And Co/Cu Composite
- P. Bhosale
- N. Lanzillo
- et al.
- 2021
- VLSI Technology 2021
Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
- Takeshi Nogami
- H. Huang
- et al.
- 2019
- VLSI Technology 2019
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- C. J. Penny
- S. Gates
- et al.
- 2017
- IITC 2017