Publications

198 results for Christian Lavoie

FinFET performance advantage at 22nm: An AC perspective
- - M. Guillorn
  - J. Chang
  - et al.
- 2008
- VLSI Technology 2008
Effect of Pt addition on growth stress and thermal stress of NiSi films
- - C. Van Bockstael
  - K. De Keyser
  - et al.
- 2008
- Journal of Applied Physics
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- - Kazuya Ohuchi
  - Christian Lavoie
  - et al.
- 2008
- IWJT 2008
Epitaxial formation of a metastable hexagonal nickel-silicide
- - K. De Keyser
  - C. Van Bockstael
  - et al.
- 2008
- Electrochemical and Solid-State Letters
Texture of NiSi films on Si(001), (111), and (110) substrates
- - C. Detavernier
  - J.L. Jordan-Sweet
  - et al.
- 2008
- Journal of Applied Physics
In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
- - W. Knaepen
  - C. Detavernier
  - et al.
- 2008
- Thin Solid Films
The role of lattice mismatch and kinetics in texture development: Co _1-xNi_xSi₂ thin films on Si(100)
- - D. Smeets
  - A. Vantomme
  - et al.
- 2008
- Journal of Applied Physics
Kinetics of Ni₃Si₂ formation in the Ni ₂Si-NiSi thin film reaction from in situ measurements
- - J.A. Kittl
  - M.A. Pawlak
  - et al.
- 2007
- Applied Physics Letters
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- - Kazuya Ohuchi
  - Christian Lavoie
  - et al.
- 2007
- IEDM 2007
Ni-Pt silicide formation through Ti mediating layers
- - Paul Besser
  - Christian Lavoie
  - et al.
- 2007
- Microelectronic Engineering